科技
类型
可以朗读
语音朗读
166千字
字数
2026-02-01
发行日期
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主编推荐语
解析忆阻器制备,助力类脑芯片研发。
内容简介
本专著研究用于类脑芯片的仿生人工突触忆阻器,分别针对类脑芯片神经形态材料表征、制备和忆阻特性研究。
内容分为五章,第一章绪论,第二章PBD:GO纳米复合物忆阻器制备、表征及其忆阻特性研究,第三章PMMA:GO纳米复合物忆阻器制备、表征及其忆阻特性研究,第四章MOF:GO纳米复合物忆阻器制备、表征及其忆阻特性研究,第五章GO:GQDs纳米复合物忆阻器制备、表征及其忆阻特性研究。
本书为神经形态计算与忆阻器类脑芯片领域的系统性研究成果凝练,旨在为相关领域的研究者与工程实践者提供重要参考。
目录
- 版权信息
- Preface
- Chapter 1 Introduction
- 1.1 Memristor
- 1.1.1 What Is The Memristor
- 1.1.2 How to Fabricate Memristors
- 1.1.3 What Is The Memristive Characteristic
- 1.1.4 What Is The Operational Mechanism for Memristors
- 1.2 Biomimic Artificial Devices
- 1.2.1 What Is The Biomimic Artificial Device
- 1.2.2 How to Confront The Issue and Infinite Probability
- 1.2.3 Memristor Is A Current and Future Promise for Biomimic Artificial Synapse Device
- Chapter 2 Memristor Fabrication,Characterization,and Properties Research Based on PBD:GO Nanocomposites
- 2.1 Memristor Fabrication on The Basis of PBD:GO Nanocomposites
- 2.2 Characterization of PBD:GO Nanocomposites
- 2.2.1 TEM Characterization
- 2.2.2 SEM Characterization
- 2.2.3 TGA-DTG Analysis
- 2.2.4 FTIR Spectrum
- 2.2.5 Raman Spectrum
- 2.2.6 XRD Characterization
- 2.2.7 Fluorescent Spectrum
- 2.3 Memristive Characteristics Based on PBD:GO Nanocomposites
- 2.3.1 Effect of Chemical Composition on Memristive Characteristics
- 2.3.2 Cycle-to-Cycle Endurance
- 2.3.3 Device-to-Device Uniformity
- 2.3.4 Retention Ability
- 2.3.5 Operational Mechanism
- 2.4 Memristor Fabrication Based on Trilayer-Structure PBD:GO/PMMA/PBD:GO
- 2.5 Characterization of PBD:GO Nanocomposite and PMMA
- 2.5.1 SEM Characterization
- 2.5.2 TEM Characterization
- 2.5.3 TGA-DTG Analysis
- 2.5.4 UV-Visible Absorption and Fluorescent Spectrum
- 2.6 Better Memristive Characteristics of ITO/PBD:GO/PMMA/PBD:GO/Ni
- 2.6.1 Effect of Chemical Component Weight on Memristive Characteristics
- 2.6.2 Cycle-to-Cycle Endurance
- 2.6.3 Retention Ability
- 2.6.4 Device-to-Device Uniformity
- 2.6.5 Operational Mechanism
- Chapter 3 Memristor Fabrication,Characterization,and Characteristics Research Based on PMMA:GO Nanocomposites
- 3.1 Memristor Fabrication Based on PMMA:GO Nanocomposites
- 3.2 Characterization of PMMA:GO Nanocomposites
- 3.2.1 SEM Characterization
- 3.2.2 FTIR Spectrum
- 3.2.3 TEM Characterization
- 3.2.4 XRD Characterization
- 3.2.5 UV-Visible Absorption Spectrum
- 3.2.6 Fluorescent Spectrum
- 3.3 Memristive Characteristics Based on PMMA:GO Nanocomposites
- 3.3.1 Effect of Chemical Component Weight Ratio on Memristive Characteristics
- 3.3.2 Cycle-to-Cycle Endurance
- 3.3.3 Retention Ability
- 3.3.4 Operation Mechanism
- Chapter 4 Memristor Fabrication,Characterization,and Characteristics Based on Mg-MOF-74:GO Nanocomposites
- 4.1 Memristor Fabrication Based on Mg-MOF-74:GO Nanocomposites
- 4.2 Characterization of Mg-MOF-74:GO Nanocomposites
- 4.2.1 SEM Characterization
- 4.2.2 FTIR Spectrum
- 4.2.3 TEM Characterization
- 4.2.4 XRD Characterization
- 4.2.5 Raman Spectrum
- 4.2.6 Thermal Analysis
- 4.3 Memristive Characteristics Based on Mg-MOF-74:GO Nanocomposites
- 4.3.1 Effect of Chemical Component Weight Ratio on Memristive Characteristics
- 4.3.2 Cycle-to-Cycle Endurance
- 4.3.3 Retention Ability
- 4.3.4 Operational Mechanism
- Chapter 5 Memristor Fabrication,Characterization,and Memristive Characteristic Based on GO:GQDs Nanocomposites
- 5.1 Memristor Fabrication Based on GO:GQDs Nanocomposites
- 5.2 Characterization of GO:GQDs Nanocomposites
- 5.2.1 SEM Characterization
- 5.2.2 FTIR Spectrum
- 5.2.3 TEM Characterization
- 5.2.4 Raman Spectrum
- 5.2.5 TGA-DTG Analysis
- 5.3 Memristive Characteristics Based on GO:GQDs Nanocomposites
- 5.3.1 Effect of Chemical Component Weight Ratio on Memristive Characteristics
- 5.3.2 Cycle-to-Cycle Endurance
- 5.3.3 Device-to-Device Uniformity
- 5.3.4 Retention Ability
- 5.3.5 Operational Mechanism
- Conclusion
- References
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